Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4530AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 - 1500 V
V
CEO
Collector-emitter voltage (open base) - 800 V
I
C
Collector current (DC) - 16 A
I
CM
Collector current peak value - 40 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 125 W
V
CEsat
Collector-emitter saturation voltage I
C
= 10 A; I
B
= 2.22A - 3.0 V
I
Csat
Collector saturation current f = 32 kHz 9 - A
f = 90 kHz 8 - A
t
f
Fall time. I
Csat
= 9.0 A; f = 32 kHz 0.20 0.26 µs
I
Csat
= 8.0 A; f = 90 kHz 0.12 - µs
PINNING - SOT430 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
heat collector
sink
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 800 V
I
C
Collector current (DC) - 16 A
I
CM
Collector current peak value - 40 A
I
B
Base current (DC) - 10 A
I
BM
Base current peak value - 15 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 125 W
T
stg
Storage temperature -55 150 ˚C
T
j
Junction temperature - 150 ˚C
123
b
c
e
April 1999 1 Rev 1.100