Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4525DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television
receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 800 V
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 30 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 45 W
V
CEsat
Collector-emitter saturation voltage I
C
= 9.0 A; I
B
= 2.25 A - 3.0 V
I
Csat
Collector saturation current f = 16 kHz 9.0 - A
f = 70 kHz t.b.f - A
V
F
Diode forward voltage I
F
= 9.0 A - 2.2 V
t
f
Fall time I
Csat
= 9.0 A;f = 16 kHz 0.4 0.55 µs
f = 70 kHz t.b.f t.b.f µs
PINNING - SOT399 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 800 V
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 30 A
I
B
Base current (DC) - 8 A
I
BM
Base current peak value - 12 A
-I
BM
Reverse base current peak value
1
-7
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 45 W
T
stg
Storage temperature -55 150 ˚C
T
j
Junction temperature - 150 ˚C
case
123
b
c
e
Rbe
1 Turn-off current.
July 1998 1 Rev 1.000