BU426
器件描述：NPN SILICON POWER TRANSISTORS
器件厂商：POINN [Power Innovations Limited]
文件大小：131.21KB，共7页
Sponsor by e络盟器件资料摘要：
BU426, BU426A
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 Rugged Triple-Diffused Planar Construction
a71 900 Volt Blocking Capability
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0) BU426BU426A VCBO 800900 V
Collector-emitter voltage (VBE = 0) BU426BU426A VCES 800900 V
Collector-emitter voltage (IB = 0) BU426BU426A VCEO 375400 V
Continuous collector current IC 6 A
Peak collector current (see Note 1) ICM 10 A
Continuous base current IB +2, -0.1 A
Peak base current (see Note 1) IBM ±3 A
Continuous device dissipation at (or below) 50°C case temperature Ptot 70 W
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 Rugged Triple-Diffused Planar Construction
a71 900 Volt Blocking Capability
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0) BU426BU426A VCBO 800900 V
Collector-emitter voltage (VBE = 0) BU426BU426A VCES 800900 V
Collector-emitter voltage (IB = 0) BU426BU426A VCEO 375400 V
Continuous collector current IC 6 A
Peak collector current (see Note 1) ICM 10 A
Continuous base current IB +2, -0.1 A
Peak base current (see Note 1) IBM ±3 A
Continuous device dissipation at (or below) 50°C case temperature Ptot 70 W
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C