2SK3522
器件资料摘要：
1
Item Symbol Ratings Unit
Drain-source voltage VDS 500
VDSX *5 500
Continuous drain current ID ±21
Pulsed drain current ID(puls] ±84
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 21
Maximum Avalanche Energy EAS *1 400
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
2.50
Tc=25
°C
220
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3522-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=10.5A VGS=10V
ID=10.5A VDS=25V
VCC=300V ID=10.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
0.568
50.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=21A
VGS=10V
L=1.67mH Tch=25°C
IF=21A VGS=0V Tch=25°C
IF=21A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
500
3.0 5.0
25
250
10 100
0.20 0.26
11 22
2280 3420
320 480
16 24
27 41
37 56
75 113
11 17
54 81
16 24
20 30
21
0.98 1.50
0.7
10.0
-55 to +150
Outline Drawings
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*1 L=1.67mH, Vcc=50V *2 Tch 150°C
=
<
*4 VDS 500V *5 VGS=-30V
<
=
Item Symbol Ratings Unit
Drain-source voltage VDS 500
VDSX *5 500
Continuous drain current ID ±21
Pulsed drain current ID(puls] ±84
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 21
Maximum Avalanche Energy EAS *1 400
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
2.50
Tc=25
°C
220
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3522-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=10.5A VGS=10V
ID=10.5A VDS=25V
VCC=300V ID=10.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
0.568
50.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=21A
VGS=10V
L=1.67mH Tch=25°C
IF=21A VGS=0V Tch=25°C
IF=21A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
500
3.0 5.0
25
250
10 100
0.20 0.26
11 22
2280 3420
320 480
16 24
27 41
37 56
75 113
11 17
54 81
16 24
20 30
21
0.98 1.50
0.7
10.0
-55 to +150
Outline Drawings
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*1 L=1.67mH, Vcc=50V *2 Tch 150°C
=
<
*4 VDS 500V *5 VGS=-30V
<
=