GENERAL DESCRIPTION
High frequency, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V 330 V
V
CEO
Collector-emitter voltage (open base) 150 V
I
C
Collector current (DC) 7 A
I
CM
Collector current peak value 15 A
P
tot
Total power dissipation T
mb
25 60 W
V
CEsat
Collector-emitter saturation voltage I
C
= 5.0A; I
B
= 0.5A 1.0 V
V
F
Diode forward voltage V
t
f
Fall time I
C
=5A,-I
B(end)
=0.5A,V
CC
=60V 0.75 s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V - 330 V
V
CEO
Collector-emitter voltage (open base) - 150 V
V
EBO
Emitter-base oltage (open colloctor) 5 V
I
C
Collector current (DC) - 7 A
I
B
Base current (DC) - 4 A
P
tot
Total power dissipation Tmb 25 - 60 W
T
stg
Storage temperature -55 150
T
j
Junction temperature - 150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
I
CBO
Collector-base cut-off current V
CB
=400V 5.0 mA
I
EBO
Emitter-base cut-off current V
EB
=5V 1.0 mA
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=10mA 150 V
V
CEsat
Collector-emitter saturation voltages I
C
= 5.0A; I
B
= 0.5A 1.0 V
h
FE
DC current gain I
C
= 2.0A; V
CE
= 5V 30
f
T
Transition frequency at f = 5MHz I
C
= 0.5A; V
CE
= 10V 10 MHz
C
c
Collector capacitance at f = 1MHz V
CB
= 10V pF
t
on
On times I
C
=5A,-I
B(end)
=0.5A,V
CC
=60V us
t
s
Tum-off storage time I
C
=5A,-I
B(end)
=0.5A,V
CC
=60V us
t
f
Fall time I
C
=5A,-I
B(end)
=0.5A,V
CC
=60V 0.75 us
ELECTRICAL CHARACTERISTICS
TO-220
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com