©2000 Fairchild Semiconductor International Rev. A, February 2000
BU406/
406H/
408
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 400 V
V
CEO
Collector-Emitter Voltage 200 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current (DC) 7 A
I
CP
Collector Current (Pulse) 10 A
I
B
Base Current 4 A
P
C
Collector Dissipation 60 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
I
CES
Collector Cut-off Current V
CE
= 400V, V
BE
= 0
V
CE
= 250V, V
BE
= 0
V
CE
= 250V, V
BE
= 0 @ T
C
=150°C
5
100
1
mA
µA
mA
I
EBO
Emitter Cut-off Current V
BE
= 6V, I
C
= 0 1 mA
V
CE
(sat) Collector-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
I
C
= 5A, I
B
= 0.5A
I
C
= 5A, I
B
= 0.8A
I
C
= 6A, I
B
= 1.2A
1
1
1
V
V
V
V
BE
(sat) Base-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
I
C
= 5A, I
B
= 0.5A
I
C
= 5A, I
B
= 0.5A
I
C
= 6A, I
B
= 1.2A
1.2
1.2
1.5
V
V
V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 0.5A 10 MHz

t
OFF
Turn OFF Time
: BU406
: BU406H
: BU408
I
C
= 5A, I
B
= 0.5A
I
C
= 5A, I
B
= 0.8A
I
C
= 6A, I
B
= 1.2A
0.75
0.4
0.4
µs
µs
µs
BU406/406H/408
High Voltage Switching
Use In Horizontal Deflection Output Stage
1.Base 2.Collector 3.Emitter
1
TO-220