BU406, BU407
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 7 A Continuous Collector Current
a71 15 A Peak Collector Current
a71 60 W at 25°C Case Temperature
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0) BU406BU407 VCBO 400330 V
Collector-emitter voltage (VBE = -2 V) BU406BU407 VCEX 400330 V
Collector-emitter voltage (IB = 0) BU406BU407 VCEO 200150 V
Emitter-base voltage VEB 6 V
Continuous collector current IC 7 A
Peak collector current (see Note 1) ICM 15 A
Continuous base current IB 4 A
Continuous device dissipation at (or below) 25°C case temperature Ptot 60 W
Operating junction temperature range Tj -55 to +150 °C
Storage temperature range Tstg -55 to +150 °C