Specifications and information herein are subject to change without notice.
990929TM2fXHD
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (D.C)
Drain Current (Pulse)
Channel Temperature
Storage Temperature
Allowable power Dissipation
V
V
A
A
°C
°C
W
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Gate to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Static Drain to Source on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
Switching Time Test Circuit Elecrical Connection
VDSS
VGSS
ID
IDP

PD
Tch
Tstg
TENTATIVE
PW≤10µS, dutycycle≤1%
Tc=25°C
unit
Forward Transfer Admittance
Features and Applications
• Low ON-state resistance.
• Very high-speed switching.
• Low-voltage dreve.
• Micaless package facilitating easy mounting.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
--200
±20
--12
--48
150
--55 to +150
40
min
--200
±20
--100
±10
V
V
µA
µA
--1.5 V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
--2.5
6.3 10.5
170
2400
540
260
40
120
720
310
--1.0
V
230
--1.5
V(BR)DSS
V(BR)GSS
ID=--1mA , VGS=0
ID=±100µA , VGS=0
IDSS VDS=--200V , VGS=0
IGSS VGS=±16V , VDS=0
VGS(OFF) VDS=--10V , ID=--1mA
| yfs | VDS=--10V , ID=--6A
RDS(On)1 ID=--5A , VGS=--4V
Ciss VDS=--20V , f=1MHz
Coss VDS=--20V , f=1MHz
Crss
VDS=--20V , f=1MHz
td(On)
tr
td(Off)
tf
VSD IS =--1.0A , VGS = 0
Case Outline
See Specified Test
Circuit .
2SJ406
P- Channel Silicon MOS FET
Very High-Speed Switching Applications
typ max unit
50Ω
P.G
S
G
D
VOUT
VDD=--100V
VIN
ID=--6A
RL=--16.7Ω
PW=10uS
D.C≤1%
VIN
0V
--10V
2SJ406
TO-220 (unit:mm)
1 : Gate
2 : Drain
3 : Source
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
φ3.2
7.2
3.5
2.552.55
2.4
4.5
2.8
0.7
2.552.55
2.4
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