BU326A
器件描述：HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：43.95KB，共4页
Sponsor by e络盟器件资料摘要：
BU326A
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
a73 STMicroelectronics PREFERRED
SALESTYPE
a73 NPN TRANSISTOR
a73 FAST SWITCHING SPEED
APPLICATIONS:
a73 POWER SUPPLIES
a73 LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BU326A is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-3 metal case particularly
intended for switch-mode CTV supply system.
®
INTERNAL SCHEMATIC DIAGRAM
December 2000
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 900 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 400 V
VEBO Emitter-Base Voltage (IC = 0) 10 V
IC Collector Current 6 A
ICM Collector Peak Current 8 A
I
B
Base Current 3 A
P
tot Total Power Dissipation at Tcase ≤ 25
o
C 75 W
T
stg
Storage Temperature -65 to 200
o
C
Tj Max. Operating Junction Temperature 200
o
C
1/4
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
a73 STMicroelectronics PREFERRED
SALESTYPE
a73 NPN TRANSISTOR
a73 FAST SWITCHING SPEED
APPLICATIONS:
a73 POWER SUPPLIES
a73 LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BU326A is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-3 metal case particularly
intended for switch-mode CTV supply system.
®
INTERNAL SCHEMATIC DIAGRAM
December 2000
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 900 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 400 V
VEBO Emitter-Base Voltage (IC = 0) 10 V
IC Collector Current 6 A
ICM Collector Peak Current 8 A
I
B
Base Current 3 A
P
tot Total Power Dissipation at Tcase ≤ 25
o
C 75 W
T
stg
Storage Temperature -65 to 200
o
C
Tj Max. Operating Junction Temperature 200
o
C
1/4