3–1
Motorola Bipolar Power Transistor Device Data
C0078C0080C0078 C0083C0105C0108C0105C0099C0111C0110 C0068C0097C0114C0108C0105C0110C0103C0116C0111C0110 C0080C0111C0119C0101C0114
C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
The BU323AP is a monolithic darlington transistor designed for automotive ignition,
switching regulator and motor control applications.
• Collector–Emitter Sustaining Voltage —
V
CER(sus)
= 475 Vdc
• 125 Watts Capability at 50 Volts
• V
CE
Sat Specified at –40C0095C = 2.0 V Max. at I
C
= 6.0 A
• Photoglass Passivation for Reliability and Stability
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Value
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎÎ
V
CEO(sus)
ÎÎÎÎÎÎÎÎ
400
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎÎ
V
CEV
ÎÎÎÎÎÎÎÎ
475
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎÎÎ
V
EB
ÎÎÎÎÎÎÎÎ
6.0
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
— Peak (1)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
I
C
I
CM
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
10
16
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
— Peak (1)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
I
B
I
BM
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
3.0
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation — T
C
= 25C0095C
— T
C
= 100C0095C
Derate above 25C0095C
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
P
D
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
125
100
1.0
ÎÎÎÎ
ÎÎÎÎ
Watts
Watts
W/C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎÎÎ
–65 to +200
ÎÎÎÎ
C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎ
R
θJC
ÎÎÎÎÎÎÎÎ
1.0
ÎÎÎÎ
C0095C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
T
L
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
275
ÎÎÎÎ
ÎÎÎÎ
C0095C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle C0120 10%.
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BU323AP/D
 Motorola, Inc. 1996
C0066C0085C0051C0050C0051C0065C0080
DARLINGTON
NPN SILICON
POWER TRANSISTOR
400 VOLTS
125 WATTS
CASE 340D–02
TO–218 TYPE
COLLECTOR
EMITTER
BASE
≈ 1 k ≈ 30
REV 8