Philips Semiconductors Preliminary specification
Silicon Diffused Power Transistor BU2727A
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection
circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand V
CES
pulses up to
1700V.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1700 V
V
CEO
Collector-emitter voltage (open base) - 825 V
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 30 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 125 W
V
CEsat
Collector-emitter saturation voltage I
C
= 5.0 A; I
B
= 0.91 A - 1.0 V
I
Csat
Collector saturation current 5.0 - A
t
s
Storage time I
CM
= 5.0 A; I
B(end)
= 0.9 A 2.2 tbf µs
PINNING - SOT93 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1700 V
V
CEO
Collector-emitter voltage (open base) - 825 V
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 30 A
I
B
Base current (DC) - 12 A
I
BM
Base current peak value - 25 A
-I
B(AV)
Reverse base current average over any 20 ms period - 200 mA
-I
BM
Reverse base current peak value
1
-25A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 125 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV
1.5 kΩ)
123
tab
b
c
e
1 Turn-off current.
September 1997 1 Rev 1.100