Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2527AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
operation up to 64 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 800 V
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 30 A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 45 W
V
CEsat
Collector-emitter saturation voltage I
C
= 6.0 A; I
B
= 1.2 A - 5.0 V
I
Csat
Collector saturation current 6.0 - A
t
s
Storage time I
Csat
= 6.0 A; I
B(end)
= 0.55 A 1.7 2.0 µs
PINNING - SOT399 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 800 V
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 30 A
I
B
Base current (DC) - 8 A
I
BM
Base current peak value - 12 A
-I
B(AV)
Reverse base current average over any 20 ms period - 200 mA
-I
BM
Reverse base current peak value
1
-7A
P
tot
Total power dissipation T
hs
≤ 25 ˚C - 45 W
T
stg
Storage temperature -55 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
Junction to heatsink without heatsink compound - 3.7 K/W
R
th j-hs
Junction to heatsink with heatsink compound - 2.8 K/W
R
th j-a
Junction to ambient in free air 35 - K/W
case
123
b
c
e
1 Turn-off current.
September 1997 1 Rev 2.200