BU1706A资料PDF,BU1706A功能介绍,Datasheet由PHILIPS公司出品

免费NewsLetter申请

设为首页

EEWorld独家

博客

论坛热点

3,000,000器件资料库等你来搜

元器件厂商按字母排序

BU1706A
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：Silicon Diffused Power Transistor 器件厂商：PHILIPS [Philips Semiconductors] 厂商主页：http://www.semiconductors.philips.com/ 文件大小：76.68KB 文件页数：7 PDF阅读：BU1706A.pdf (点击阅读器件资料) 摘要： Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1750 V V CEO Collector-emitter voltage (open base) - 850 V I C Collector current (DC) - 5 A I CM Collector current peak value - 8 A P tot Total power dissipation T mb ≤ 25 ?C - 100 W V CEsat Collector-emitter saturation voltage I C = 1.5 A; I B = 0.3 A - 1.0 V I Csat Collector saturation current 1.5 - A t f Fall time I CM = 1.5 A; I B(on) = 0.3 A 0.25 0.6 ?s PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter tab collector LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1750 V V CEO Collector-emitter voltage (open base) - 850 V I C Collector current (DC) - 5 A I CM Collector current peak value - 8 A I B Base current (DC) - 3 A I BM Base current peak value - 5 A -I B(AV) Reverse base current average over any 20ms period - 100 mA -I BM Reverse base current peak value - 4 A P tot Total power dissipation T mb ≤ 25 ?C - 100 W T stg Storage temperature -65 150 ?C T j Junction temperature - 150 ?C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base - 1.25 K/W R th j-a Junction to ambient in free air 60 - K/W 123 tab b c e September 1997 1 Rev 1.000 相关器件：

BU1706A

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：Silicon Diffused Power Transistor
器件厂商：PHILIPS [Philips Semiconductors]
厂商主页：http://www.semiconductors.philips.com/
文件大小：76.68KB
文件页数：7
PDF阅读：BU1706A.pdf (点击阅读器件资料)

摘要：
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706A
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1750 V
V
CEO
Collector-emitter voltage (open base) - 850 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 8 A
P
tot
Total power dissipation T
mb
≤ 25 ?C - 100 W
V
CEsat
Collector-emitter saturation voltage I
C
= 1.5 A; I
B
= 0.3 A - 1.0 V
I
Csat
Collector saturation current 1.5 - A
t
f
Fall time I
CM
= 1.5 A; I
B(on)
= 0.3 A 0.25 0.6 ?s
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1750 V
V
CEO
Collector-emitter voltage (open base) - 850 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 8 A
I
B
Base current (DC) - 3 A
I
BM
Base current peak value - 5 A
-I
B(AV)
Reverse base current average over any 20ms period - 100 mA
-I
BM
Reverse base current peak value - 4 A
P
tot
Total power dissipation T
mb
≤ 25 ?C - 100 W
T
stg
Storage temperature -65 150 ?C
T
j
Junction temperature - 150 ?C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Junction to mounting base - 1.25 K/W
R
th j-a
Junction to ambient in free air 60 - K/W
123
tab
b
c
e
September 1997 1 Rev 1.000

相关器件：

元器件厂商按字母排序

热点新闻: Freescale亏损33.7亿美元即将裁员10%; AMD向博通贱卖数字电视芯片剥离非核心业务; 分析称第四季苹果或削减iPhone产量达40%; Gartner:明年芯片业营收或跌10% 后年将复苏; 我国有线电视数字转换用户首次突破4000万; ST与Arkados合作研制HomePlug AV soc; 中国汽车电子排名第十航盛电子掘金混合动力; Morpho加入Tensilica为汽车GPS提供技术; 化合物半导体全球单体最大芯片厂在深投产; 2008中国RFID发展年会暨年度评选活动正式启动

应用设计: 基于ARM和蓝牙的无线信号采集系统的设计与实现; 基于单片机和GPRS的矿区铁路道口监测系统; 基于MSP430单片机的开关稳压电源设计; 基于嵌入式系统的虚拟仪器设计; 基于80C51微处理器的OLED模块设计; 嵌入式阵列处理器的发展现状及前景; 广泛应用于未来一代汽车的高亮LED照明方案; 利用微控制器进行网络通信的网卡配置; 基于MCU的家庭防盗报警系统的设计与应用; 基于FPGA的UART接口开发

电子电路: [集成稳压电源]LM317集成稳压电路; [电脑主板]电脑主板电路图 830_58; [有线通信]实用门铃电路; [充电电路]简单充电器电路; [电子镇流器]电子式节能灯的装配; [线性稳压电源]电容降压稳压电源电路图; [充电电路]锂电池充电器电路; [电话机原理图]电话机原理图02; [充电电路]劲牛充电器电路; [供电电路]可控硅交流调压器电路

关于我们 - 广告合作 - 联系方式 - 给我们建议 - 器件索引

北京市海淀区知春路23号集成电路设计园量子银座506　电话:(010)82350740