Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706A
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1750 V
V
CEO
Collector-emitter voltage (open base) - 850 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 8 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 100 W
V
CEsat
Collector-emitter saturation voltage I
C
= 1.5 A; I
B
= 0.3 A - 1.0 V
I
Csat
Collector saturation current 1.5 - A
t
f
Fall time I
CM
= 1.5 A; I
B(on)
= 0.3 A 0.25 0.6 µs
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1750 V
V
CEO
Collector-emitter voltage (open base) - 850 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 8 A
I
B
Base current (DC) - 3 A
I
BM
Base current peak value - 5 A
-I
B(AV)
Reverse base current average over any 20ms period - 100 mA
-I
BM
Reverse base current peak value - 4 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 100 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Junction to mounting base - 1.25 K/W
R
th j-a
Junction to ambient in free air 60 - K/W
123
tab
b
c
e
September 1997 1 Rev 1.000