Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN HIGH VOLTAGE SILICON POWER TRANSISTOR BU109
TO-3
Metal Can Package
HORIZONTAL DEFLECTION OUTPUT STAGE OF TVs and CRTs
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION UNITS
Collector Emitter Voltage V
Collector Base Voltage V
Emitter Base Voltage V
Collector Emitter Voltage (VBE= -1.5V) V
Collector Current A
Collector Peak Current (Repetitive) A
Collector Peak Current (t=10ms) A
Base Current A
Total Power Dissipation@ Tc<25ºC W
Juntion Temperature ºC
Storage Temperature ºC
THERMAL RESISTANCE
Junction to Ambient ºC/W
Junction to Case ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS
Collector Cut off Current ICES VCE=330V, VBE=0 5.0 mA
ICES VCE=200V, VBE=0 100 µA
VCE=200V, VBE=0
TC=150ºC
Emitter Cut off Current IEBO VEB=6V, IC=0 1.0 mA
Collector Emitter Saturation Voltage VCE(Sat) * IC=5A,IB=0.5A 1.0 V
Base Emitter Saturation Voltage VBE(Sat) * IC=5A,IB=0.5A 1.2 V
Transition Frequency fT IC=0.5A, VCE=10V 10 MHz
Turn off Time toff IC=5A, IB end = 0.5A 0.75 us
*Pulse Test: Pulse Duration=300ms, Duty Cycle =1.5%
VALUESYMBOL
VCEO
VCBO
VEBO
VCEV
IC
ICM
ICM
IB
Ptot
Tj
Tstg
150
330
6.0
330
7.0
10.0
15.0
4.0
60
150
-65 To+150
Rth(j-a)
Rth(j-c)
70
2.08
1.0 mAICES
IS/ISO 9002
Lic# QSC/L-000019.3
Continental Device India Limited Data Sheet Page 1 of 3