COMSET SEMICONDUCTORS 1/4
BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Anode to Cathode - Ratings
Voltage
1
)
Symbol Ratings
BTX18-
100
BTX18-
200
BTX18-
300
BTX18-
400
BTX18-
500
V
R
Continuous Reverse Voltage 100 200 300 400 500 V
V
RWM
Crest Working Reverse Voltage 100 200 300 400 500 V
V
RRM
Repetitive Peak Reverse Voltage
(δ = 0.01 ; f=50Hz)
120 240 350 500 600 V
V
RSM
Non-repetitive peak reverse voltage
(t<10ms)
120 240 350 500 600 V
V
DWM
Crest Working off-state Voltage 100 200 300 400 500 V
V
D
Continuous off-state Voltage 100 200 300 400 500 V
V
DRM
Repetitive peak off-state voltage
(δ = 0.01 ; f=50Hz)
120 240 350 500 600 V²)
V
DSM
Non-repetitive peak off-state voltage
(t<10ms)
120 240 350 500 600 V²)
Currents
Symbol Ratings
BTX18-
100
BTX18-
200
BTX18-
300
BTX18-
400
BTX18-
500
T
CASE
=105°C Max : 1.0 A
I
T(AV)
Average on-state current
(averaged over any 20
ms period)
T
AMB
=60°C, in
free air
Max : 250 mA
I
T
On-state Current (D.C.)
T
CASE
=100°C
Max : 1.6 A
I
T(RMS)
RMS on-state Current Max : 1.6 A
SILICON THYRISTORS
The BTX18 series is a range of p-gate reverse blocking thyristors, in a
TO-39 metal enveloppe, intended for use in general low power
applications up to a A average on-state current.