PROFET
®
BTS721L1
Semiconductor Group 1 of 15 2003-Oct-01
Smart Four Channel Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short-circuit protection
•
Thermal shutdown
•
Overvoltage protection
(including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)

•
Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
•
Open drain diagnostic output
• Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of V
bb
protection
•
Electrostatic discharge (ESD) protection

Application
•
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitive loads
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS

technology. Providing embedded protective functions.


Pin Definitions and Functions
Pin Symbol Function
1,10,
11,12,
15,16,
19,20
V
bb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
3 IN1 Input 1 .. 4, activates channel 1 .. 4 in case of
5 IN2 logic high signal
7 IN3
9 IN4
18 OUT1 Output 1 .. 4, protected high-side power output
17 OUT2 of channel 1 .. 4. Design the wiring for the
14 OUT3 max. short circuit current
13 OUT4
4 ST1/2 Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
8 ST3/4 Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
2 GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)
6 GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)

1)
With external current limit (e.g. resistor R
GND
=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage Protection V
bb(AZ)
43 V

Operating voltage
V
bb(on)
5.0 ... 34 V
active channels: one two parallel four parallel
On-state resistance R
ON
100 50 25 mΩ
Nominal load current I
L(NOM)
2.9 4.3 6.3 A
Current limitation I
L(SCr)
8 8 8 A
Pin configuration (top view)

V
bb
1 • 20 V
bb

GND1/2 2 19 V
bb

IN1 3 18 OUT1
ST1/2 4 17 OUT2
IN2 5 16 V
bb

GND3/4 6 15 V
bb

IN3 7 14 OUT3
ST3/4 8 13 OUT4
IN4 9 12 V
bb

V
bb
10 11 V
bb


P-DSO-20