PROFET
®
Data Sheet BTS660P
Infineon Technologies AG Page 1 2003-Oct-01
Smart Highside High Current Power Switch
Reversave
•
Reverse battery protection by self turn on of
power MOSFET
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Over temperature protection
•
Over voltage protection (including load dump)
•
Clamp of negative voltage at output
•
Fast deenergizing of inductive loads
1
)

•
Low ohmic inverse current operation
•
Diagnostic feedback with load current sense
•
Open load detection via current sense
•
Loss of V
bb
protection
2
)

•
Electrostatic discharge (ESD) protection
Application
•
Power switch with current sense diagnostic
feedback for up to 48 V DC grounded loads
•
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS

chip on chip technology. Providing embedded protective functions.

IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
3
Overvoltage
protection
+ V
bb
PROFET

OUT
4 & Tab
1,2,6,7
Load GND
Load
Output
Voltage
detection
R
IS
IS
5
I
IS
I
L
V
IS
I
IN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
R
bb
V
IN


1
) With additional external diode.
2
)
Additional external diode required for energized inductive loads (see page 9).
Product Summary
Overvoltage protection V
bb(AZ)
70 V
Output clamp
V
ON(CL)

62
V
Operating voltage
V
bb(on)
5.0 ... 58 V
On-state resistance R
ON
9mΩ
Load current (ISO) I
L(ISO)
44 A
Short circuit current limitation I
L(SC)
90 A
Current sense ratio I
L
:

I
IS
13 000


TO 220-7SMD
1
7
Standard
1
7
SMD