BTS707
器件描述：Smart Two Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：162.98KB，共12页
Sponsor by e络盟器件资料摘要：
PROFET
®
BTS 707
Semiconductor Group 1 08.96
Smart Two Channel Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short-circuit protection
•
Thermal shutdown
•
Overvoltage protection
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)
•
Open drain diagnostic output
• Open load detection in OFF-state
•
CMOS compatible input
•
Loss of ground and loss of V
bb
protection
•
Electrostatic discharge (ESD) protection
Application
•
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
•
Most suitable for inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin Symbol Function
1,10,
11,12,
15,16,
19,20
V
bb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
3 IN1 Input 1,2, activates channel 1,2 in case of
7 IN2 logic high signal
17,18 OUT1 Output 1,2, protected high-side power output
13,14 OUT2 of channel 1,2. Design the wiring for the max.
short circuit current
4 ST1 Diagnostic feedback 1,2 of channel 1,2,
8 ST2 open drain, low in on state on failure or high in
off state on failure
2 GND1 Ground 1 of chip 1 (channel 1)
6 GND2 Ground 2 of chip 2 (channel 2)
5,9 N.C. Not Connected
1)
With external current limit (e.g. resistor R
GND
=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage Protection V
bb(AZ)
65 V
Operating voltage
V
bb(on)
5.8 ... 58 V
active channels: one two parallel
On-state resistance R
ON
250 125 mΩ
Nominal load current I
L(NOM)
1.9 2.8 A
Pin configuration (top view)
V
bb
1 • 20 V
bb
GND1 2 19 V
bb
IN1 3 18 OUT1
ST1 4 17 OUT1
N.C. 5 16 V
bb
GND2 6 15 V
bb
IN2 7 14 OUT2
ST2 8 13 OUT2
N.C. 9 12 V
bb
V
bb
10 11 V
bb
®
BTS 707
Semiconductor Group 1 08.96
Smart Two Channel Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short-circuit protection
•
Thermal shutdown
•
Overvoltage protection
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)
•
Open drain diagnostic output
• Open load detection in OFF-state
•
CMOS compatible input
•
Loss of ground and loss of V
bb
protection
•
Electrostatic discharge (ESD) protection
Application
•
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
•
Most suitable for inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin Symbol Function
1,10,
11,12,
15,16,
19,20
V
bb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
3 IN1 Input 1,2, activates channel 1,2 in case of
7 IN2 logic high signal
17,18 OUT1 Output 1,2, protected high-side power output
13,14 OUT2 of channel 1,2. Design the wiring for the max.
short circuit current
4 ST1 Diagnostic feedback 1,2 of channel 1,2,
8 ST2 open drain, low in on state on failure or high in
off state on failure
2 GND1 Ground 1 of chip 1 (channel 1)
6 GND2 Ground 2 of chip 2 (channel 2)
5,9 N.C. Not Connected
1)
With external current limit (e.g. resistor R
GND
=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage Protection V
bb(AZ)
65 V
Operating voltage
V
bb(on)
5.8 ... 58 V
active channels: one two parallel
On-state resistance R
ON
250 125 mΩ
Nominal load current I
L(NOM)
1.9 2.8 A
Pin configuration (top view)
V
bb
1 • 20 V
bb
GND1 2 19 V
bb
IN1 3 18 OUT1
ST1 4 17 OUT1
N.C. 5 16 V
bb
GND2 6 15 V
bb
IN2 7 14 OUT2
ST2 8 13 OUT2
N.C. 9 12 V
bb
V
bb
10 11 V
bb