Data Sheet BTS6510
Infineon Technologies AG Page 1of 15 2003-Oct-01



Smart Highside High Current Power Switch
Reversave
•
Reverse battery protection by self turn on of
power MOSFET
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Overtemperature protection
•
Overvoltage protection (including load dump)
•
Clamp of negative voltage at output
•
Fast deenergizing of inductive loads
1
)

•
Low ohmic inverse current operation
•
Diagnostic feedback with load current sense
•
Open load detection via current sense
•
Loss of V
bb
protection
2
)

•
Electrostatic discharge (ESD) protection
Application
•
Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
•
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS

chip on chip technology. Providing embedded protective functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
3
Overvoltage
protection
+ V
bb
PROFET

OUT
4 & Tab
1,2,6,7
Load GND
Load
Output
Voltage
detection
R
IS
IS
5
I
IS
I
L
V
IS
I
IN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
R
bb
V
IN



1
) With additional external diode.
2
)
Additional external diode required for energized inductive loads (see page 8).
Product Summary
Operating voltage
V
bb(on)
5.0 ... 34 V
On-state resistance R
ON
6.0 mΩ
Noinal current I
L(nom)
17 A
Load current (ISO) I
L(ISO)
70 A
Short circuit current limitation I
L(SC)
130 A
Current sense ratio I
L
:

I
IS
14 000


TO 220-7
1
7
SM D