PROFET

Data sheet BTS 6163 D
Infineon Technologies AG Page 1 of 16 2003-Oct-01


Smart Highside Power Switch
Reversave
•
Reverse battery protection by self turn on of
power MOSFET
Features
•
Short circuit protection with latch
•
Current limitation
•
Overload protection
•
Thermal shutdown with restart
•
Overvoltage protection (including load dump)
•
Loss of ground protection
•
Loss of V
bb
protection (with external diode for
charged inductive loads)
•
Very low standby current
•
Fast demagnetization of inductive loads
•
Electrostatic discharge (ESD) protection
•
Optimized static electromagnetic compatibility (EMC)
Diagnostic Function
•
Proportional load current sense (with defined fault signal in case of overload operation, overtemperature
shutdown and/or short circuit shutdown)

Application
•
Power switch with current sense diagnostic feedback for 42V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitive loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS

chip on chip technology. Providing embedded protective functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
Overvoltage
protection
+ V
bb
PROFET

OUT
3 & Tab
1, 5
Load GND
Load
Output
Voltage
detection
R
IS
IS
4
I
IS
I
L
V
IS
I
IN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
R
bb
V
IN


Product Summary
Operating voltage
V
bb(on)
5.5 ... 62 V
On-state resistance R
ON
20 mΩ
Nominal current I
L(nom)
5.5 A
Load current (ISO) I
L(ISO)
17 A
Current limitation
I
L12(SC)
70 A
Package
TO-252-5-1
(DPAK 5 pin; less than half the size as TO 220 SMD)