BTS 612 N1
Semiconductor Group 1
Smart Two Channel Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in OFF-state
•
CMOS compatible input
•
Loss of ground and loss of V
bb
protection
•
Electrostatic discharge (ESD) protection
Application
•
µC compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS

technology. Fully protected by embedded protection
functions.
+ V
bb
IN1
ST
Signal GND
ESD
PROFET

OUT1
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection 1
Short to Vbb
Level shifter
Temperature
sensor 1
Rectifier 1
Limit for
unclamped
ind. loads 1
Gate 1
protection
Current
limit 1
3
5
2
4
1
Load GND
Load
V
Logic
Overvoltage
protection
OUT2
Open load
detection 2
Short to Vbb
Level shifter
Temperature
sensor 2
Rectifier 2
Limit for
unclamped
ind. loads 2
Gate 2
protection
Current
limit 2
7
IN26
Charge
pump 1
Charge
pump 2

1)
With external current limit (e.g. resistor R
GND
=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage protection V
bb(AZ)
43 V
Operating voltage
V
bb(on)
5.0 ... 34 V
channels: each
both
parallel
On-state resistance R
ON
200 100 mΩ
Load current (ISO) I
L(ISO)
2.3 4.4 A
Current limitation I
L(SCr)
44A
TO-220AB/7
1
7
Standard
1
7
Straight leads
1
7
SMD