PROFET
®
BTS 432 E2
Semiconductor Group 1 04.96
Smart Highside Power Switch
Features
•
Load dump and reverse battery protection
1
)
•
Clamp of negative voltage at output
•
Short-circuit protection
•
Current limitation
•
Thermal shutdown
•
Diagnostic feedback
•
Open load detection in ON-state
•
CMOS compatible input
•
Electrostatic discharge (ESD) protection
•
Loss of ground and loss of V
bb
protection
2)
•
Overvoltage protection
•
Undervoltage and overvoltage shutdown with auto-restart and hysteresis
Application
•
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS

chip on chip technology. Fully protected by embedded protection
functions.
+ V
bb
IN
ST
Signal GND
ESD
PROFET

OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
R
bb

1)
No external components required, reverse load current limited by connected load.
2)
Additional external diode required for charged inductive loads
Product Summary
V
Load dump
80 V
V
bb
-V
OUT
Avalanche Clamp 58 V
V
bb (operation)
4.5 ... 42 V
V
bb (reverse)
-32 V
R
ON
38 mΩ
I
L(SCp)
44 A
I
L(SCr)
35 A
I
L(ISO)
11 A
5