PROFET® BTS 432 D2
Infineon Technologies AG Page 1 of 14 1999-03-22
Smart Highside Power Switch
Features
• Load dump and reverse battery protection1)
• Clamp of negative voltage at output
• Short-circuit protection
• Current limitation
• Thermal shutdown
• Diagnostic feedback
• Open load detection in ON-state
• CMOS compatible input
• Electrostatic discharge (ESD) protection
• Loss of ground and loss of Vbb protection2)
• Overvoltage protection
• Undervoltage and overvoltage shutdown with auto-
restart and hysteresis
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete
circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
+ Vbb
IN
ST
Signal GND
ESD
PROF
ET

OUT
GND
Logic
Voltag
esensor
Voltag
esource
Open
loaddetectio
n
Short
circuitdetectio
n
Charge
pumpLevel
shifter
Temperatur
e sensorRectifie
r
Limit for
unclampe
dind.
loads
Gate
protectio
n
Curren
t limit
2
4
1
3
5
Load GND
Load
V Logic
Overvoltag
eprotectio
n
Rbb

1) No external components required, reverse load current limited by connected load.
2) Additional external diode required for charged inductive loads
Product Summary
VLoad dump 80 V
Vbb-VOUT Avalanche Clamp 58 V
Vbb (operation) 4.5 ... 42 V
Vbb (reverse) -32 V
RON 38 mΩ
IL(SCp) 44 A
IL(SCr) 35 A
IL(ISO) 11 A
1
5
Straight leads
1
5
SMD
5
Standard