PROFET
®
BTS 410 E2
Semiconductor Group 1 of 16 2003-Oct-01
Smart Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)

•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of V
bb
protection
•
Electrostatic discharge (ESD) protection

Application
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS

technology. Providing embedded protective functions.

+ V
bb
IN
ST
Signal GND
ESD
PROFET

OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection



1)
With external current limit (e.g. resistor R
GND
=150 Ω) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Product Summary
Overvoltage protection V
bb(AZ)
65 V
Operating voltage
V
bb(on)
4.7 ... 42 V
On-state resistance R
ON
220 mΩ
Load current (ISO) I
L(ISO)
1.8 A
Current limitation I
L(SCr)
5A


TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD