2002-09-04Page 1
HITFET

=== BTS 3118 D
Smart Lowside Power Switch
Product Summary
Drain source voltage V
DS
42 V
On-state resistance R
DS(on)
100 mG01
Nominal load current I
D(Nom)
2.4 A
Clamping energy E
AS
2 J
Features
G02 Logic Level Input
G02 Input Protection (ESD)
G02 Thermal shutdown
G02 Overload protection
G02 Short circuit protection
G02 Overvoltage protection
G02 Current limitation
G02 Analog driving possible
Application
G02 All kinds of resistive, inductive and capacitive loads in switching
or linear applications
G02 µC compatible power switch for 12 V DC applications
G02 Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
G03
technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
Pin 1
Pin 2 and 4 (TAB)
Pin 3