19.05.2000Page 1
HITFET
===
BTS 133
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
•=Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
Product Summary
Drain source voltage
V
DS
60 V
On-state resistance
R
DS(on)
50
mΩ
Current limit
I
D(lim)
21 A
Nominal load current
I
D(ISO)
7 A
Clamping energy
E
AS
2000 mJ
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET in Smart SIPMOS

chip on chip tech-
nology. Fully protected by embedded protected functions.
protection
Overvoltage
Drain
IN
ESD
HITFET
Source
Current
1
3
Over-
protection
temperature Short circuit
protection
+
dv/dt
limitation limitation
V
bb
Short circuit
protection
LOAD
2
Overload
protection
M