13.07.1998
Semiconductor Group
Page 1
HITFET

BTS 117
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
• Thermal Shutdown
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
Product Summary
Drain source voltage V60V
DS
On-state resistance R
DS(on)
100 mW
ACurrent limit I
D(lim)
7
Nominal load current AI
D(ISO)
3.5
Clamping energy mJE
AS
1000
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET in Smart SIPMOS

chip on chip tech-
nology. Fully protected by embedded protected functions.
protection
Overvoltage
Drain
IN
ESD
HITFET

Source
Current
1
3
Over-
protection
temperature Short circuit
protection
+
dv/dt
limitation lim itation
V bb
Short circuit
protection
LOAD
2
Overload
protection
M