Semiconductor Group 1
Smart Highside Power Switch
TEMPFET

BTS 100
Features
a71 P channel
a71 Enhancement mode
a71 Temperature sensor with thyristor characteristic
a71 The drain pin is electrically shorted to the tab
Pin 1 2 3
GDS
Type V
DS
I
D
R
DS(on)
Package Ordering Code
BTS 100 – 50 V – 8 A 0.3 Ω TO-220AB C67078-A5007-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS
– 50 V
Drain-gate voltage, R
GS
= 20 kΩ V
DGR
– 50
Gate-source voltage V
GS
± 20
Continuous drain current, T
C
= 30 °C I
D
– 8.0 A
ISO drain current
T
C
= 85 ˚C, V
GS
= 10 V, V
DS
= 0.5 V
I
D-ISO
– 1.5
Pulsed drain current, T
C
= 25 °C I
D puls
– 32
Short circuit current, T
j
= – 55 ... + 150 °C I
SC
– 25
Short circuit dissipation, T
j
= – 55 ... + 150 °C P
SCmax
500 W
Power dissipation P
tot
40
Operating and storage temperature range T
j
, T
stg
– 55 ... + 150 °C
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
Thermal resistance
Chip-case
Chip-ambient
R
th JC
R
th JA
≤ 3.1
≤ 75
K/W
04.96