BTA216
器件描述:Three quadrant triacs guaranteed commutation
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器件资料摘要:
Philips Semiconductors Product specification
Three quadrant triacs BTA216 series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope intended for
use in motor control circuits or with other BTA216- 600D -
highly inductive loads. These devices BTA216- 600E 800E
balance the requirements of commutation BTA216- 600F 800F
performance and gate sensitivity. The V
DRM
Repetitive peak off-state 600 800 V
"sensitive gate" E series and "logic level" voltages
D series are intended for interfacing with I
T(RMS)
RMS on-state current 16 16 A
low power drivers, including micro I
TSM
Non-repetitive peak on-state 140 140 A
controllers. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
Repetitive peak off-state - 600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 16 A
T
mb
≤ 99 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current T
j
= 25 ˚C prior to
surge
t = 20 ms - 140 A
t = 16.7 ms - 150 A
I
2
tI
2
t for fusing t = 10 ms - 98 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 20 A; I
G
= 0.2 A; - 100 A/µs
on-state current after dI
G
/dt = 0.2 A/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 2000 1 Rev 1.000