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BTA212X
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：Three quadrant triacs high commutation 器件厂商：PHILIPS [Philips Semiconductors] 厂商主页：http://www.semiconductors.philips.com/ 文件大小：21.8KB 文件页数：4 PDF阅读：BTA212X.pdf (点击阅读器件资料) 摘要： Philips Semiconductors Preliminary specification Three quadrant triacs BTA212X series C high commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in circuits where high BTA212X- 500C 600C 800C static and dynamic dV/dt and high V DRM Repetitive peak off-state 500 600 800 V dI/dt can occur. These devices will voltages commutate the full rated rms current I T(RMS) RMS on-state current 12 12 12 A at the maximum rated junction I TSM Non-repetitive peak on-state 95 95 95 A temperature, without the aid of a current snubber. PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 V DRM Repetitive peak off-state - 500 1 600 1 800 V voltages I T(RMS) RMS on-state current full sine wave; - 12 A T hs ≤ 56 ?C I TSM Non-repetitive peak full sine wave; on-state current T j = 25 ?C prior to surge t = 20 ms - 95 A t = 16.7 ms - 105 A I 2 tI 2 t for fusing t = 10 ms - 45 A 2 s dI T /dt Repetitive rate of rise of I TM = 20 A; I G = 0.2 A; 100 A/?s on-state current after dI G /dt = 0.2 A/?s triggering I GM Peak gate current - 2 A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any 20 ms - 0.5 W period T stg Storage temperature -40 150 ?C T j Operating junction - 125 ?C temperature T1T2 G123 case 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/?s. October 1997 1 Rev 1.000 相关器件：BTA212X-800C BTA212X-500C BTA212X-600C

BTA212X

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：Three quadrant triacs high commutation
器件厂商：PHILIPS [Philips Semiconductors]
厂商主页：http://www.semiconductors.philips.com/
文件大小：21.8KB
文件页数：4
PDF阅读：BTA212X.pdf (点击阅读器件资料)

摘要：
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA212X series C
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a full pack, plastic envelope
intended for use in circuits where high BTA212X- 500C 600C 800C
static and dynamic dV/dt and high V
DRM
Repetitive peak off-state 500 600 800 V
dI/dt can occur. These devices will voltages
commutate the full rated rms current I
T(RMS)
RMS on-state current 12 12 12 A
at the maximum rated junction I
TSM
Non-repetitive peak on-state 95 95 95 A
temperature, without the aid of a current
snubber.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 12 A
T
hs
≤ 56 ?C
I
TSM
Non-repetitive peak full sine wave;
on-state current T
j
= 25 ?C prior to
surge
t = 20 ms - 95 A
t = 16.7 ms - 105 A
I
2
tI
2
t for fusing t = 10 ms - 45 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 20 A; I
G
= 0.2 A; 100 A/?s
on-state current after dI
G
/dt = 0.2 A/?s
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ?C
T
j
Operating junction - 125 ?C
temperature
T1T2
G123
case
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/?s.
October 1997 1 Rev 1.000

相关器件：BTA212X-800C BTA212X-500C BTA212X-600C

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