EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BTA208B-500F

器件描述:Three quadrant triacs guaranteed commutation
器件厂商:PHILIPS [Philips Semiconductors]
文件大小:22.66KB,共4页
Sponsor by e络盟
器件资料摘要:
Philips Semiconductors Objective specification
Three quadrant triacs BTA208B series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in BTA208B- 500D 600D -
motor control circuits or with other BTA208B- 500E 600E 800E
highly inductive loads. These devices BTA208B- 500F 600F 800F
balance the requirements of V
DRM
Repetitive peak off-state 500 600 800 V
commutation performance and gate voltages
sensitivity. The "sensitive gate" E I
T(RMS)
RMS on-state current 8 8 8 A
series and "logic level" D series are I
TSM
Non-repetitive peak on-state 65 65 65 A
intended for interfacing with low power current
drivers, including micro controllers.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 8 A
T
mb
≤ 102 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current T
j
= 25 ˚C prior to
surge
t = 20 ms - 65 A
t = 16.7 ms - 71 A
I
2
tI
2
t for fusing t = 10 ms - 21 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 12 A; I
G
= 0.2 A; 100 A/µs
on-state current after dI
G
/dt = 0.2 A/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
13
mb
2
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
September 1997 1 Rev 1.000