Philips Semiconductors Product specification
Thyristors BT258B series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT
thyristors in a plastic envelope
suitable for surface mounting, BT258B- 500R 600R 800R
intended for use in general purpose V
DRM
, Repetitive peak off-state 500 600 800 V
switching and phase control V
RRM
voltages
applications. These devices are I
T(AV)
Average on-state current 5 5 5 A
intended to be interfaced directly to I
T(RMS)
RMS on-state current 8 8 8 A
microcontrollers, logic integrated I
TSM
Non-repetitive peak on-state 75 75 75 A
circuits and other low power gate current
trigger circuits.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
mb anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -600R -800R
V
DRM
, V
RRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(AV)
Average on-state current half sine wave; T
mb
≤ 111 ˚C - 5 A
I
T(RMS)
RMS on-state current all conduction angles - 8 A
I
TSM
Non-repetitive peak half sine wave; T
j
= 25 ˚C prior to
on-state current surge
t = 10 ms - 75 A
t = 8.3 ms - 82 A
I
2
tI
2
t for fusing t = 10 ms - 28 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 10 A; I
G
= 50 mA; - 50 A/µs
on-state current after dI
G
/dt = 50 mA/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125
2
˚C
temperature
13
mb
2
ak
g
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
September 1997 1 Rev 1.100