Philips Semiconductors Product specification
Thyristors BT151B series

GENERAL DESCRIPTION QUICK REFERENCE DATA
Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, suitable for surface
mounting, intended for use in BT151B- 500R 650R 800R
applications requiring high V
DRM
, Repetitive peak off-state 500 650 800 V
bidirectional blocking voltage V
RRM
voltages
capability and high thermal cycling I
T(AV)
Average on-state current 7.5 7.5 7.5 A
performance. Typical applications I
T(RMS)
RMS on-state current 12 12 12 A
include motor control, industrial and I
TSM
Non-repetitive peak on-state 100 100 100 A
domestic lighting, heating and static current
switching.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
mb anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -650R -800R
V
DRM
, V
RRM
Repetitive peak off-state - 500
1
650
1
800 V
voltages
I
T(AV)
Average on-state current half sine wave; T
mb
≤ 109 ˚C - 7.5 A
I
T(RMS)
RMS on-state current all conduction angles - 12 A
I
TSM
Non-repetitive peak half sine wave; T
j
= 25 ˚C prior to
on-state current surge
t = 10 ms - 100 A
t = 8.3 ms - 110 A
I
2
tI
2
t for fusing t = 10 ms - 50 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 20 A; I
G
= 50 mA; - 50 A/µs
on-state current after dI
G
/dt = 50 mA/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
13
mb
2
ak
g
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.100