Philips Semiconductors Product specification
Thyristors BT145 series

GENERAL DESCRIPTION QUICK REFERENCE DATA
Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT145- 500R 600R 800R
bidirectional blocking voltage V
DRM
, Repetitive peak off-state 500 600 800 V
capability and high thermal cycling V
RRM
voltages
performance. Typical applications I
T(AV)
Average on-state current 16 16 16 A
include motor control, industrial and I
T(RMS)
RMS on-state current 25 25 25 A
domestic lighting, heating and static I
TSM
Non-repetitive peak on-state 300 300 300 A
switching. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -600R -800R
V
DRM
, V
RRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(AV)
Average on-state current half sine wave; T
mb
≤ 101 ˚C - 16 A
I
T(RMS)
RMS on-state current all conduction angles - 25 A
I
TSM
Non-repetitive peak half sine wave; T
j
= 25 ˚C prior to
on-state current surge
t = 10 ms - 300 A
t = 8.3 ms - 330 A
I
2
tI
2
t for fusing t = 10 ms - 450 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 50 A; I
G
= 0.2 A; - 200 A/µs
on-state current after dI
G
/dt = 0.2 A/µs
triggering
I
GM
Peak gate current - 5 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 20 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
ak
g
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997 1 Rev 1.200