Philips Semiconductors Product specification
Triacs BT134W series E
sensitive gate
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT
in a plastic envelope suitable for
surface mounting, intended for use in BT134W- 500E 600E
general purpose bidirectional V
DRM
Repetitive peak off-state voltages 500 600 V
switching and phase control I
T(RMS)
RMS on-state current 1 1 A
applications, where high sensitivity is I
TSM
Non-repetitive peak on-state current 10 10 A
required in all four quadrants.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600
V
DRM
Repetitive peak off-state - 500
1
600
1
V
voltages
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 108 ˚C - 1 A
I
TSM
Non-repetitive peak full sine wave; T
j
= 25 ˚C prior to
on-state current surge
t = 20 ms - 10 A
t = 16.7 ms - 11 A
I
2
tI
2
t for fusing t = 10 ms - 0.5 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 1.5 A; I
G
= 0.2 A;
on-state current after dI
G
/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
4
1 23
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
August 1997 1 Rev 1.200