BSX20
器件描述：HIGH SPEED SATURATED SWITCHES
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：65.3KB，共6页
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BSX20
HIGH SPEED SATURATED SWITCHES
DESCRIPTION
The BSX20 is a silicon planar epitaxial NPN
transistors in Jedec TO-18 metal case. They are
primarily intended for veery high speed saturated
switching applications.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE =0) 40 V
V
CES
Collector-Emitter Voltage (V
BE
=0) 40 V
VCEO Collector-Emitter Voltage (IB =0) 15 V
V
EBO
Emitter-Base Voltage (I
C
=0) 4.5 V
I
C
Collector Current (t = 10 µs) 0.5 A
Ptot Total Dissipation at Tamb ≤ 25
o
C
at Tcase ≤ 25
o
C
0.36
1.2
W
W
Tstg Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
TO-18
1/6
HIGH SPEED SATURATED SWITCHES
DESCRIPTION
The BSX20 is a silicon planar epitaxial NPN
transistors in Jedec TO-18 metal case. They are
primarily intended for veery high speed saturated
switching applications.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE =0) 40 V
V
CES
Collector-Emitter Voltage (V
BE
=0) 40 V
VCEO Collector-Emitter Voltage (IB =0) 15 V
V
EBO
Emitter-Base Voltage (I
C
=0) 4.5 V
I
C
Collector Current (t = 10 µs) 0.5 A
Ptot Total Dissipation at Tamb ≤ 25
o
C
at Tcase ≤ 25
o
C
0.36
1.2
W
W
Tstg Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
TO-18
1/6