1Motorola Small–Signal Transistors, FETs and Diodes Device Data

C0083C0119C0105C0116C0099C0104C0105C0110C0103 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
12 Vdc
Collector–Base Voltage V
CBO
20 Vdc
Collector Current — Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient R
C0113JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction to Ambient R
C0113JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BSV52LT1 = B2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 1.0 mAdc)
V
(BR)CEO
12 —
Vdc
Collector Cutoff Current
(V
CB
= 10 Vdc, I
E
= 0)
(V
CB
= 10 Vdc, I
E
= 0, T
A
= 125°C)
I
CBO
—
—
100
5.0
nAdc
µAdc
1. FR–5 = 1.0 C0002 0.75 C0002 0.062 in.
2. Alumina = 0.4 C0002 0.3 C0002 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by BSV52LT1/D
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SEMICONDUCTOR TECHNICAL DATA
C0066C0083C0086C0053C0050C0076C0084C0049
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
 Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER