BST52
器件描述:NPN SILICON PLANAR DARLINGTON TRANSISTOR
文件大小:16.11KB,共1页
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器件资料摘要:
SOT8
9 NPN S
I
L
ICON P
L
A
NAR
DARL
INGTON TR
ANSIS
TOR
ISS
U
E
3
–
JAN
UA
R
Y
1
9
9
6
FEAT
URES
*
Fas
t Swi
tching
*
H
igh h
FE
P
A
R
T
MA
KING
D
ETAIL —
AS3
AB
SOL
UTE M
AXI
MU
M
R
A
T
I
NGS.
PAR
AMETE
R
S
YMBO
L
V
A
L
U
E
U
N
I
T
Colle
ctor
-Bas
e Volta
ge
V
CB
O
90
V
Colle
ctor
-Emitte
r V
o
lt
age
V
CE
O
80
V
Emit
t
e
r
-
B
a
se V
o
lt
a
g
e
V
EB
O
10
V
Pe
a Pulse Cur
r
e
nt
I
CM
1.
5
A
Continuou
s
Co
lle
ctor
Curr
ent
I
C
50
0
m
A
Ba
se
Cu
r
r
ent
I
B
10
0
m
A
Power
Dis
sip
a
tion at
T
am
b
=2
5
°
C
P
tot
1W
Oper
at
i
n
g a
n
d St
o
r
a
g
e
Temper
a
ture
Range
T
j
:T
stg
-
6
5
to
+1
50
°
C
ELECTR
IC
AL
CH
AR
AC
T
E
R
I
S
T
I
C
S
(at
T
amb
=
2
5°C
unle
s
s
o
t
h
e
rwi
se sta
t
e
d
)
.
PAR
AMETE
R
SYMBOL
M
I
N
.
M
A
X
.
U
N
I
T
CONDITION
S.
Colle
ctor
-Bas
e
B
r
e
a
kdown
V
o
lt
a
g
e
V
(BR)C
B
O
90
V
I
C
=1
0
µ
A, I
E
=0
Colle
ctor
-Emitte
r
B
r
e
a
kdown
V
o
lt
a
g
e
V
(BR)C
E
O
80
V
I
C
=1
0
mA, I
B
=0
*
Emit
t
e
r
-
B
a
se
B
r
e
a
kdown
V
o
lt
a
g
e
V
(BR)EB
O
10
V
I
E
=1
0
µ
A, I
C
=0
Emit
t
e
r
Cut-Off
Curr
ent
I
EBO
10
µ
A
V
EB
=
8
V, I
E
=0
Colle
ctor
-Emitte
r
Cut-
O
f
f Cur
r
e
n
t
I
CES
10
µ
A
V
CE
=
8
0V, I
C
=0
Colle
ctor
-Emitte
r
S
a
tur
ation Volta
g
e
V
CE(sat
)
1.
3
1.
3
V V
I
C
=
5
0
0mA, I
B
=
0.5
mA
I
C
=
5
0
0mA, I
B
=
0.5
mA
T
j
=1
50
°C
B
a
s
e
-Emitte
r
S
a
tur
ation Volta
g
e
V
BE(sat
)
1.
9
V
I
C
=
5
0
0mA, I
B
=
0.5
mA
St
ati
c For
war
d
Cur
r
e
nt
Tr
ansfe
r
Ratio
h
FE
1K 2K
I
C
=
1
5
0mA, V
CE
=
1
0V*
I
C
=
-50
0mA
,
V
CE
=
-10
V*
Turn On Time
t
on
4
0
0 T
ypica
l
n
s
I
C
=
5
0
0mA
I
Bon
=I
B
off
=0.5
mA
Turn Off
T
ime
t
off
1
.5K T
ypica
l
n
s
*
Mea
sure
d
u
nder
pulsed conditions. Pu
ls
e width=3
0
0
µ
s. Duty
cyc
le
≤
2%
Spice
par
ame
t
e
r dat
a is a
v
a
ilable
u
pon re
q
u
e
st f
or this de
vice
F
or ty
pical c
h
a
r
a
cte
r
istics gr
aphs se
e F
MMT61
4 dat
ashe
et.
BS
T
5
2
C
C
B
E
S
O
T8
9
3 -
8
0