BSS98
器件描述：SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：78.69KB，共7页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 12/05/1997
BSS 98
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...1.6 V
Pin 1 Pin 2 Pin 3
S G D
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 98 50 V 0.3 A 3.5 Ω TO-92 SS98
Type Ordering Code Tape and Reel Information
BSS 98 Q62702-S053 E6288
BSS 98 Q62702-S517 E6296
BSS 98 Q62702-S635 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
50 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
50
Gate source voltage V
GS
± 14
Gate-source peak voltage,aperiodic V
gs
± 20
Continuous drain current
T
A
= 25 °C
I
D
0.3
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
1.2
Power dissipation
T
A
= 25 °C
P
tot
0.63
W
BSS 98
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...1.6 V
Pin 1 Pin 2 Pin 3
S G D
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 98 50 V 0.3 A 3.5 Ω TO-92 SS98
Type Ordering Code Tape and Reel Information
BSS 98 Q62702-S053 E6288
BSS 98 Q62702-S517 E6296
BSS 98 Q62702-S635 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
50 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
50
Gate source voltage V
GS
± 14
Gate-source peak voltage,aperiodic V
gs
± 20
Continuous drain current
T
A
= 25 °C
I
D
0.3
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
1.2
Power dissipation
T
A
= 25 °C
P
tot
0.63
W