2000-04-14Page 1
BSS84PW
Preliminary data
SIPMOS

Small-Signal-Transistor
Features
c183 P-Channel
c183 Enhancement mode
c183 Avalanche rated
c183 Logic Level
c183 dv/dt rated
Product Summary
Drain source voltage V
DS
-60 V
Drain-source on-state resistance
R
DS(on)
8
c87
Continuous drain current
I
D
-0.15 A
1
3
VSO05561
2
Pin 1 PIN 2 PIN 3
G S D
Type Package Ordering Code
BSS84PW SOT-323 Q67042-S4028
Marking
YBs
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
= 25 °C
I
D
-0.15 A
Pulsed drain current
T
A
= 25 °C
I
D puls
-0.6
Avalanche energy, single pulse
I
D
= -0.15 A , V
DD
= -25 V, R
GS
= 25 c87
E
AS
2.61 mJ
Avalanche energy, periodic limited by T
jmax
E
AR
0.03
Reverse diode dv/dt
I
S
= -0.15 A, V
DS
= -48 V, di/dt = 200 A/µs,
T
jmax
= 150 °C
dv/dt 6 kV/µs
Gate source voltage V
GS
±20 V
Power dissipation
T
A
= 25 °C
P
tot
0.3 W
Operating and storage temperature
T
j
, T
stg
-55...+150 °C
IEC climatic category; DIN IEC 68-1 55/150/56