DS30204 Rev. C-2 1 of 2 BSS84DW
BSS84DW
DUAL P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
c183 Low On-Resistance
c183 Low Gate Threshold Voltage
c183 Low Input Capacitance
c183 Fast Switching Speed
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol BSS84DW Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage (Note 3) VDGR -50 V
Gate-Source Voltage Continuous VGSS c17720 V
Drain Current (Note 1) Continuous ID -130 mA
Total Power Dissipation (Note 1) Pd 200 mW
Thermal Resistance, Junction to Ambient Rc113JA 625 c176C/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 c176C
c183 Case: SOT-363, Molded Plastic
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Terminal Connections: See Diagram
c183 Marking: KXX: Product marking code
YY: Date code
c183 Marking Code: K84
c183 Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
LFD
B C
H
K
KXX YY
G
1
S
1
S
2
G
2
D
1
D
2
KXXYY
SOT-363
Dim MinMax
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J c190 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
All Dimensions in mm
S
1
D
1
D
2
S
2
G
1
G
2
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width c163 300c109s, duty cycle c163 2c37c46
3. R
GS
c163 20Kc87.