2002-09-04Page 1
Final data
BSS 84 P
SIPMOS

Small-Signal-Transistor
Product Summary
V
DS
-60 V
R
DS(on)
8 c87
I
D
-0.17 A
Feature
c183 P-Channel
c183 Enhancement mode
c183 Logic Level
c183 Avalanche rated
c183 dv/dt rated
SOT-23
1
2
3
VPS05161
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
YBs
Type Package Ordering Code
BSS 84 P SOT-23 Q67041-S1417
Maximum Ratings, at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D

-0.17
-0.14
A
Pulsed drain current
T
A
=25°C
I
D puls
-0.68
Avalanche energy, single pulse
I
D
=-0.17 A , V
DD
=-25V, R
GS
=25c87
E
AS
2.6 mJ
Avalanche energy, periodic limited by T
jmax
E
AR
0.036
Reverse diode dv/dt
I
S
=-0.17A, V
DS
=-48V, di/dt=-200A/µs, T
jmax
=150°C
dv/dt -6 kV/µs
Gate source voltage V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
0.36 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/56