SOT2
3 P-CHANNEL
ENHANCEMENT
MOD
E
VERTICAL DMOS FET
IS
SUE 2
SEPT
E
MBE
R 1
995
a37
PAR
T
M
A
R
K
I
NG DETAI
L
S
P
ABSO
L
U
TE M
A
XI
M
U
M
RATI
N
G
S
.
PARA
M
ETER
SY
M
B
O
L
V
A
L
U
E
U
N
I
T
Dr
ai
n-
So
u
r
c
e
Vo
l
t
ag
e
V
DS
-5
0
V
C
o
nt
i
nuo
us Dr
ai
n C
u
r
r
e
n
t
I
D
-
130
m
A
Pul
sed D
r
ai
n
C
u
r
r
e
nt
I
DM
-
520
m
A
G
a
te-S
o
u
rce V
o
lt
a
g
e P
e
a
k
V
GS
±
20
V
Pow
er
D
i
ssi
pat
i
on at

T
am
b
=2
5

C
P
TO
T
360
m
W
O
p
er
a
t
i
n
g

and St
or
age
Tem
p
er
at
ur
e R
a
ng
e
t
j
:t
st
g
-
55 t
o
+
150

C
EL
ECTRI
C
AL
CHARACTERI
STI
CS (
a
t
T
am
b
= 25
C
)
.
PARA
M
ETER
S
Y
M
B
O
L
M
I
N
.
T
Y
P
.
M
AX.
U
N
I
T
C
O
N
D
I
T
I
O
N
S
.
Dr
ai
n-
So
u
r
c
e
Br
eakdow
n Vo
l
t
age
BV
DS
S
-5
0
V
V
GS
=0V
,
I
D
=0.
25m
A
G
a
te-S
o
u
rce
Thr
eash
ol
d V
o
l
t
age
V
GS(
t
h
)
-0
.8
-1
.5
-2
.
0
V
V
DS
=V
GS
,
I
D
=-
1
m
A
Z
e
ro

g
a
te V
o
lt
ag
e
D
r
a
i
n
C
u
rre
n
t
I
DS
S
-1 -2
-1
5
-6
0
-1
0
0
µ
A
µ
A
T
G6a
=25 C
T
G6a
=125
C
V
G44G53
=-50V, V
G47G53
=0V(
2
)
T
j
=25

C
V
G44G53
=-25V, V
G47G53
=0V
G
a
t
e
-
S
o
u
r
c
e
Le
ak
age
C
u
rren
t
I
GS
S
-1
-
1
0
n
A
V
GS
=
±
20V
V
DS
=0V
D
r
a
i
n

S
o
u
r
c
e
O
n
-S
ta
te
R
e
si
st
a
n
ce
(1)
R
DS(
o
n
)
61
0
Ω
V
GS
=-
5V
I
D
=
-
10
0m
A
Fo
rw
ard
Tr
ansconduct
ance (
1
)
(2
)
g
fs
0.
05
0.
0
7
S
V
DS
=-
2
5
V
I
D
=
-
10
0m
A
I
nput
C
a
paci
t
a
nce
(
2
)
C
is
s
40
pF
V
GS
=0V
V
DS
=-
2
5
V
f
=
1M
Hz
O
u
t
p
ut
Capaci
t
a
nce
C
os
s
15
R
eve
r
s
e Tra
n
s
f
e
r
C
apac
it
anc
e (
2
)
C
rs
s
6
Tur
n-
O
n
T
i
m
e
t
on
t
d
(
on)
10
ns
V
DD
=-
30V
I
D
=
-
0.
27A
V
GS
=-
10V
R
GS
=50
Ω
t
r
10
Tur
n-
O
f
f
Ti
m
e
t
of
f
t
d
(
o
ff)
18
t
f
25
* (
1
)
M
eas
u
r
ed
un
der pu
l
s
ed
c
o
nd
i
t
i
o
n
s
.
P
u
l
s
e w
i
d
t
h =
300
µ
s.
D
u
ty
cy
c
l
e
2
%
(2
) S
a
m
p
le
te
s
t
.
BSS84
D
G
S
3 - 69