BSS80, BSS82
1 Nov-30-2001
PNP Silicon Switching Transistors
G01 High DC current gain: 0.1mA to 500 mA
G01 Low collector-emitter saturation voltage
G01 Complementary types: BSS79, BSS81 (NPN)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BSS80B
BSS80C
BSS82B
BSS82C
CHs
CJs
CLs
CMs
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter Symbol
BSS80 BSS82
Unit
Collector-emitter voltage V
CEO
40 60 V
Collector-base voltage V
CBO
60 V
Emitter-base voltage V
EBO
5
DC collector current I
C
800 mA
Peak collector current I
CM
1 A
Base current I
B
100 mA
Peak base current I
BM
200
Total power dissipation, T
S
= 77 °C P
tot
330 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01220 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance