BSS80
器件描述:PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
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器件资料摘要:
Semiconductor Group 1
PNP Silicon Switching Transistors BSS 80
BSS 82
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BSS 80 B
BSS 80 C
BSS 82 B
BSS 82 C
Q62702-S557
Q62702-S492
Q62702-S560
Q62702-S482
CHs
CJs
CLs
CMs
SOT-23
1 2 3
B E C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
Parameter Symbol
BSS 80
Unit
Collector-emitter voltage VCE0 40 V
Collector-base voltage VCB0
Emitter-base voltage VEB0
Collector current IC mA
Base current IB mA
Total power dissipation, TS =77˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 290 K/W
Peak collector current ICM A
Peak base current IBM
BSS 82
60
800
100
330
150
1
200
Values
60
Junction - soldering point Rth JS ≤ 220
5
a71 High DC current gain
a71 Low collector-emitter saturation voltage
a71 Complementary types: BSS 79, BSS 81 (NPN)
5.91