LESHAN RADIO COMPANY, LTD.
M40–1/2
1
3
2
BSS64LT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Driver Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
80 Vdc
Collector–Base Voltage V
CBO
120 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I C 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BSS64LT1 = AM
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
V
(BR)CEO
80 — Vdc
(I
C
= 4.0 mAdc )
Collector–Base Breakdown Voltage
V
(BR)CBO
120 — Vdc
(I
C
= 100 µAdc )
Emitter–Base Breakdown Voltage
V
(BR)EBO
5.0 — Vdc
(I
E
= 100 µAdc )
Collector Cutoff Current I
CBO
nAdc
( V
CB
= 90 Vdc ) — 0.1
( T
A
= 150°C ) — 500
Emitter Cutoff Current
I
EBO — 200 nAdc
( V
EB
= 4.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
2
EMITTER
3
COLLECTOR
1
BASE