BSS79
器件描述:NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
文件大小:157.7KB,共5页
Sponsor by e络盟
器件资料摘要:
Semiconductor Group 1
NPN Silicon Switching Transistors BSS 79
BSS 81
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BSS 79 B
BSS 79 C
BSS 81 B
BSS 81 C
Q62702-S503
Q62702-S501
Q62702-S555
Q62702-S605
CEs
CFs
CDs
CGs
SOT-23
1 2 3
B E C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
Parameter Symbol
BSS 79
Unit
Collector-emitter voltage VCE0 40 V
Collector-base voltage VCB0
Emitter-base voltage VEB0
Collector current IC mA
Base current IB mA
Total power dissipation, TS =77˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 290 K/W
Peak collector current ICM A
Peak base current IBM
BSS 81
35
800
100
330
150
1
200
Values
75
Junction - soldering point Rth JS ≤ 220
6
a71 High DC current gain
a71 Low collector-emitter saturation voltage
a71 Complementary types: BSS 80, BSS 82 (PNP)
5.91