1998. 6. 15 1/1
SEMICONDUCTOR
TECHNICAL DATA
BSS64
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
MAXIMUM RATING (Ta=251)
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
GA
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=251)
Type Name
Marking
Lot No.
U6
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage V
CBO
120 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
5 V
Collector Current I
C
100 mA
Emitter Current I
E
-100 mA
Collector Power Dissipation P
C
200 mW
Junction Temperature T
j
1501
Storage Temperature Range T
stg -651501
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage V
(BR)CEO
I
C
=4mA, I
B
=0 80 - - V
Collector-Base Breakdown Voltage V
(BR)CBO
I
C
=100ÌA, I
E
=0 120 - - V
Emitter-Base Breakdown Voltage V
(BR)EBO
I
E
=100ÌA, I
C
=0 5.0 - - V
Collector Cut-off Current I
CBO
V
CB
=90V, I
E
=0 - - 100 nA
V
CB
=90V, I
E
=0, Ta=1501- - 50ÌA
Emitter Cut-off Current I
EBO
V
EB
=5V, I
C
=0 - - 200 nA
DC Current Gain h
FE
V
CE
=1V, I
C
=1mA - 60 -
V
CE
=1V, I
C
=4mA 20 - -
V
CE
=1V, I
C
=10mA - 80 -
V
CE
=1V, I
C
=20mA - 55 -
Base-Emitter Saturation Voltage V
BE(sat)
I
C
=4mA, I
B
=0.4mA - - 1.2 V
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
=4mA, I
B
=0.4mA - - 0.15
V
I
C
=50mA, I
B
=15mA - - 0.2
Transition Frequency f
T
V
CE
=10V, I
C
=4mA, f=100MHz 60 - - MHz
Collector Output Capacitance C
ob
V
CB
=10V, I
E
=0, f=1MHz - - 5.0 pF