1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0072C0105C0103C0104 C0086C0111C0108C0116C0097C0103C0101 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–100 Vdc
Collector–Emitter Voltage
R
BE
= 10 kΩ
V
CER
–110
Vdc
Collector Current — Continuous I
C
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient R
C0113JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BSS63LT1 = T1
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –100 µAdc)
V
(BR)CEO
–100 — —
Vdc
Collector–Emitter Breakdown Voltage
(I
C
= –10 µAdc, I
E
= 0, R
BE
= 10 kΩ)
V
(BR)CER
–110 — —
Vdc
Collector–Base Breakdown Voltage
(I
E
= –10 C0109Adc, I
E
= 0)
V
(BR)CBO
–110 — —
Vdc
Emitter–Base Breakdown Voltage
(I
E
= –10 C0109Adc)
V
(BR)EBO
–6.0 — —
Vdc
Collector Cutoff Current
(V
CB
= –90 Vdc, I
E
= 0)
I
CBO
— — –100
nAdc
Collector Cutoff Current
(V
CE
= –110 Vdc, R
BE
= 10 kΩ)
I
CER
— — –10
µAdc
Emitter Cutoff Current
(V
EB
= –6.0 Vdc, I
C
= 0)
I
EBO
— — –200
nAdc
1. FR–5 = 1.0 C0002 0.75 C0002 0.062 in.
2. Alumina = 0.4 C0002 0.3 C0002 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by BSS63LT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0083C0083C0054C0051C0076C0084C0049
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
 Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
REV 1