BSS192P
器件描述:SIPMOS Small-Signal-Transistor
文件大小:79.38KB,共8页
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器件资料摘要:
2002-07-25Page 1
Preliminary data
BSS 192 P
SIPMOS
Small-Signal-Transistor
Product Summary
V
DS
-250 V
R
DS(on)
12 Ω
I
D
-0.19 A
Feature
• P-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
SOT89
2
1
3
VPS05162
2
Gate
pin1
Drain
pin 2
Source
pin 3
Marking
KC
Type Package Ordering Code Tape and Reel Information
BSS 192 P
SOT89 Q67042-S4168
-
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-0.19
-0.1
A
Pulsed drain current
T
A
=25°C
I
D puls
-0.76
Reverse diode dv/dt
I
S
=-0.19A, V
DS
=-200V, di/dt=-200A/µs, T
jmax
=150°C
dv/dt
6 kV/µs
Gate source voltage V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
1 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56